1083 nm laser diode
Technology
- DBR Single-Frequency Laser Chip
- InGaAs QW Active Layer
- Epi designed for high reliability
Features
- Available in several package styles
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Absolute Maximum Rating
Parameter | Symbol | Unit | Min | Max |
---|---|---|---|---|
Storage Temperature | TSTG | °C | 0 | 80 |
Operating Temperature | TOP | °C | 5.0 | 70 |
CW Laser Forward Current, T=Top | IF | mA | – | 300** |
Pulsed Laser Forward Current, T=25°C, | IF | A | – | 1.0 |
PW=300 ns, DC=10% | ||||
Laser Reverse Voltage | VR | V | – | 2.0 |
Photodiode Forward Current 1/ 2/ | IP | mA | – | 5.0 |
Photodiode Reverse Voltage 1/ 2/ | VR | V | – | 20.0 |
Photodiode Dark Current, VR=10V, LD IF=0, 1/ 2/ | ID | nA | – | 50 |
TEC Current 1/ 2/ | ITEC | A | -2.5 | 2.5 |
TEC Voltage 1/ 2/ | VTEC | V | -6.0 | 6.0 |
Thermistor Current 1/ 2/ | ITHRM | mA | – | 1.0 |
Thermistor Voltage 1/ 2/ | VTHRM | V | – | 10 |
ESD (HBM) | – | V | – | 500 |
External Back Reflection | – | dB | – | -14 |
Lead SolderingTemperature, 10 sec. Max., 1/ 2/ | – | °C | – | 260 |
Fiber Pull Force 1/ | – | N | – | 5.0 |
Fiber Bend Radius 1/ | – | mm | – | 35 |
1/ Butterfly package , 2/ TO-8 package **Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified
Parameter | Symbol | Unit | Min | Typ | Max |
---|---|---|---|---|---|
Center Wavelength | λc | nm | 1081 | 1083 | 1085 |
Optical Output Power @ LIV current | Po | mW | See Power Options Call-out | ||
Slope Efficiency, 1/ | ηd | W/A | 0.3 | 0.36 | |
Slope Efficiency | ηd | W/A | 0.6 | 0.72 | – |
Threshold Current | Ith | mA | – | 30 | 40 |
Laser Series Resistance | RS | Ω | – | 2.0 | 2.5 |
Laser Forward Voltage | VF | V | – | 2.0 | 2.5 |
Thermistor Resistance @25°C, 2/ | RT | KΩ | – | 10 | – |
Photodiode Dark Current, VR=10V, LD IF=0, 2/ | ID | nA | – | – | 50 |
Beam Divergence @ FWHM | θװ X θ┴ | º | – | 6 X 32 | 8 X 34 |
Laser Line Width | ∆v | MHz | – | 1 | – |
Side Mode Suppression Ratio | SMSR | dB | -30 | – | – |
Polarization Extinction Ratio, 1/ | PER | dB | -16 | -19 | – |
Laser Polarization | TE | ||||
Mode Structure | Fundamental Mode |
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package Type
CS / CM / T8 / BF
Minimum Power (mW)
80 / 120