760 nm laser diode
Technology
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Facets passivated to withstand high powerwithout catastrophic optical damage (COD)
- Epi designed for high reliability
Features
- Wavelength tunable across several lines of the O2 spectrumaround 760nm
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Absolute Maximum Rating
| Parameter | Symbol | Unit | Min | Max |
|---|---|---|---|---|
| Storage Temperature | TSTG | °C | 0 | 80 |
| Operating Temperature | TOP | °C | 10.0 | 40 |
| CW Laser Forward Current,T=25°C | IF | mA | – | 120** |
| Laser Reverse Voltage | VR | V | – | 0.0 |
| Photodiode Forward Current 1/ | IP | mA | – | 5.0 |
| Photodiode Reverse Voltage 1/ | VR | V | – | 20.0 |
| Photodiode Dark Current, VR=10V, LD IF=0, 1/ | ID | nA | – | 50 |
| TEC Current 1/ | ITEC | A | -2.0 | 2.0 |
| TEC Voltage 1/ | VTEC | V | -6.0 | 6.0 |
| Thermistor Current 1/ | ITHRM | mA | – | 1.0 |
| Thermistor Voltage 1/ | VTHRM | V | – | 10 |
| Lead Soldering Temperature, 10 sec. Max. | – | °C | – | 260 |
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified
| Parameter | Symbol | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| Center Wavelength @ 150mA | λc | nm | 759 | 760 | 762 |
| Optical Output Power @ 150mA | Po | mW | See Power Options Call-out | ||
| Slope Efficiency | ηd | W/A | 0.6 | 0.75 | – |
| Threshold Current | Ith | mA | – | 70 | 90 |
| Laser Series Resistance | RS | Ω | – | 2.0 | 2.5 |
| Laser Forward Voltage @ 150mA | VF | V | – | 2.0 | 2.5 |
| Thermistor Resistance @ 25°C, 2/ | RT | KΩ | – | 10 | – |
|
Photodiode Dark Current, VR=10V, LD IF=0, 2/ |
ID | nA | – | – | 50 |
| Laser Line Width @ 150mA | ∆v | MHz | 0.7 | 1 | 10 |
| Polarization Extinction Ratio, 1/ | PER | dB | -16 | -19 | – |
| Beam Divergence @ FWHM | θװ X θ┴ | º | – | 6 X 26 | 8 X 30 |
| Side Mode Suppression Ratio | SMSR | dB | -30 | – | – |
| Laser Polarization | TE | ||||
| Mode Structure | Fundamental Mode | ||||
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package Type
CS / CM / T8
Minimum Power (mW)
40 / 80