スクリーンショット 2016-02-10 19.06.10

808 nm laser diode

Technology

  • DBR Single-Frequency Laser Chip
  • InGaAs QW Active Layer
  • Epi designed for high reliability

Features

  • Available in several package styles
  • Pulsed operation for spectral stability at short pulse lengths
  • High power for CW applications
  • High Slope Efficiency
Absolute Maximum Rating

Parameter Symbol Unit Min Max
Storage Temperature TSTG °C 0 80
Operating  Temperature TOP °C 5.0 70
CW Laser Forward Current, T=Top IF mA **
Pulsed Laser Forward Current, T=25°C, IF A 0.5
PW=300 ns, DC=10%
Laser Reverse Voltage VR V 0.0
Photodiode Forward Current 1/ 2/ IP mA 5.0
Photodiode Reverse Voltage 1/ 2/ VR V 20.0
Photodiode Dark Current, VR=10V, LD IF=0, 1/ 2/ ID nA 50
TEC Current 1/ 2/ ITEC A -2.5 2.5
TEC Voltage 1/ 2/ VTEC V -6.0 6.0
Thermistor Current 1/  2/ ITHRM mA 1.0
Thermistor Voltage 1/  2/ VTHRM V 10
ESD (HBM) V 500
External Back Reflection dB -14
Lead SolderingTemperature, 10 sec. Max., 1/ 2/ °C 260
Fiber Pull Force 1/ N 5.0
Fiber Bend Radius 1/ mm 35

1/ Butterfly package , 2/ TO-8 package **Do not exceed drive current or operating power of supplied LIV